Beilstein J. Nanotechnol.2022,13, 172–181, doi:10.3762/bjnano.13.12
the literature. Initial oxidation processes were identified based on high-resolution STM images.
Keywords: high-indexSisurface; in situ measurement; oxidation; scanning tunneling microscopy (STM); Introduction
High-index silicon surfaces have drawn considerable interest for their usefulness in
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Figure 1:
(a) Filled-state STM image of Si(113)-(3 × 2). Image size: 30 × 30 nm2, Vs = −2.0 V, It = 0.05 nA. ...